Features: • Adoption of FBET, MBIT processes.
• Low collector-to-emitter saturation voltage.
• Large current capacity and wide ASO.
• Fast switching speed.
• The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC's further miniaturization.
Application• Voltage regulators, relay drivers, lamp drivers, electrical equipment.Pinout
Specifications
| Absolute maximum ratings |
| VCEO [V] |
50 |
| IC [A] |
2 |
| PC [W] |
1.3
When mounted on ceramic substrate (250mm²*0.8mm) 1unit |
| Electrical characteristics |
| hFE min |
100 |
| hFE max |
560 |
| VCE [V] |
2 |
| IC [A] |
0.1 |
| VCE (sat) typ [V] |
0.15 |
| VCE (sat) max [V] |
0.4 |
| IC [A] |
1 |
| IB [mA] |
50 |
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
Collector-to-Base Voltage |
VCBO |
|
()60 |
V |
|
Collector-to-Emitter Voltage |
VCEO |
|
()50 |
V |
|
Emitter-to-Base Voltage |
IEBO |
|
()6 |
V |
|
Drain Current |
IC |
|
()2 |
A |
|
Collector Current (Pulse) |
ICP |
|
()4 |
A |
|
Allowable Power Dissipation |
PD |
|
0.5 |
W |
|
|
1.3 |
W |
|
Channel Temperature |
Tj |
|
150 |
°C |
|
Storage Temperature |
Tstg |
|
55 to +150 |
°C |
DescriptionThe 2SD1623 is designed as the NPN epitaxial planar silicon transistor that has four points of features:(1)Adoption of FBET, MBIT processes; (2)Low collector-to-emitter saturation voltage; (3)Large current capacity and wide ASO; (4)Fast switching speed; (5)The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC's further miniaturization. And this device can be used in voltage regulators, relay drivers, lamp drivers, electrical equipment applications.
The absolute maximum ratings of the 2SD1623 can be summarized as:(1)collector-base voltage: 60 V;(2)collector-emitter voltage: 50 V;(3)emitter-base voltage: 6 V;(4)collector current: 2 or 4 A;(5)junction temperature: 150 ;(6)storage temperature: -55 to +150 ;(7)Collector power dissipation: 1.3 W.
The electrical characteristics of 2SD1623 can be summarized as:(1)Collector cutoff current: 100 nA;(2)Emitter cutoff current: 100 nA;(3)DC current gain: 100 to 560;(4)Gain bandwidth product: 150 MHz;(5)Output capacitance: 12 pF;(6)collector-emitter saturation voltage: 0.15 V;(7)Base-emitter saturation voltage: 0.9 to 1.2 V;(8)Collector-base breakdown voltage: 60 V;(9)Collector-emitter breakdown voltage: 50 V. If you want to know more information such as the electrical characteristics about the 2SD1623, please download the datasheet in www.seekic.com or www.chinaicmart.com.
2SD1623 Data Sheet
