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2SD1620

Features: · Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.· Large current capacity and highly resistant to breakdown.· Excellent linearity of hFE in the region from low current to high current.· Ultrasmall size supports high-density, ultrasmallsized...

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2SD1620: Features: · Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.· Large current capacity and highly resistant to breakdown.· Excellent linearity of hFE in ...

2SD1620 Data Sheet

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Part Number:
2SD1620
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted.
· Large current capacity and highly resistant to breakdown.
· Excellent linearity of hFE in the region from low current to high current.
· Ultrasmall size supports high-density, ultrasmallsized hybrid IC designs.




Pinout






Specifications

Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
30
V
Collector-to-Emitter Voltage
VCEX
20
V
Emitter-to-Base Voltage
IEBO
10
V
Drain Current
IC
6
A

Collector Current (Pulse)

ICP

3

A

Allowable Power Dissipation
PD

5
W

Mounted on ceramic board (250mm2X 0.8mm)
500
W
Channel Temperature
Tj
150
°C
Storage Temperature
Tstg
55 to +150
°C


Absolute maximum ratings
VCEO [V] 10
IC [A] 3
PC [W] 1.3
When mounted on ceramic substrate (250mm²*0.8mm) 1unit
Electrical characteristics
hFE min 140
hFE max -
VCE [V] 2
IC [A] 3
VCE (sat) typ [V] 0.3
VCE (sat) max [V] 0.4
IC [A] 3
IB [mA] 60





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