2SD1509

The 2SD1509 is a kind of transistor. It is silicon NPN epitaxial type (darlington). It is intended for micro motor drive, hammer drive applications, switching applications and power amplifier applications. There are some features as follows: (1)high DC current gain: hFE=2000 (min); (2)low saturation voltage: VCE(sat)=1.5 V (max).

What comes next is about the absolute maximum ratings of 2SD1509(Ta=25): (1)collector-base voltage, VCBO: 80 V; (2)collector-emitter voltage, VCEO: 80 V; (3)emitter-base voltage, VEBO: 8 V; (4)collector current, IC: 2 A; (5)base current, IB: 0.5 A; (6)collector power dissipation, PC: 1.5 W at Ta=25 and 10 W at Tc=25; (7)junction temperature, Tj: 150; (8)storage temperature range, Tstg: -55 to 150.

The following is about electrical characteristics of 2SD1509(Ta=25): (1)collector cutoff current, ICBO: 10A max at VCB=80 V, IE=0; (2)emitter cutoff current, IEBO: 4 mA max at VEB=8 V, IC=0; (3)collector-emitter breakdown voltage, V(BR)CEO: 80 V min at IC=10 mA, IB=0; (4)DC current gain, hFE: 2000 min at VCE=2 V, IC=1 A; (5)collector-emitter saturation voltage, VCE(sat): 1.5 V max at IC=1 A, IB=1 mA; (6)base-emitter saturation voltage, VBE(sat): 2.0 V max at IC=1 A, IB=1 mA; (7)transition frequency, fT: 100 MHz typ at VCE=2 V, IC=0.5 A; (8)collector output capacitance, Cob: 20 pF typ at VCB=10 V, IE=0, f=1 MHz.