2SD1409A

The 2SD1409A is designed as toshiba transistor silicon triple diffused type for igniter applications and high voltage switching applications.

2SD1409A has two features. (1)High DC current gain which would be 600 min at Vce=2V ad Ic=2A. (2)Monolithic construction with built-in base-emitter shunt resistor. Those are all the main features.

Some absolute maximum ratings of 2SD1409A have been concluded into several points as follow. (1)Its collector to base voltage would be 600V. (2)Its collector to emitter voltage would be 400V. (3)Its emitter to base voltage would be 5V. (4)Its collector current would be 6A. (5)Its base current would be 1A. (6)Its collector power dissipation would be 2.0W at Ta=25°C and it would be 25W at Tc=25°C. (7)Its junction temperature would be 150°C. (8)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of 2SD1409A are concluded as follow. (1)Its collector cutoff current would be max 0.5uA. (2)Its emitter cutoff current would be max 3mA. (3)Its collector to emitter breakdown voltage would be min 400V. (4)Its DC current gain would be min 600 with conditions of Vce=2V and Ic=2A and it would be min 100 with conditions of Vce=2V and Ic=4A. (5)Its collector to emitter saturation voltage would be max 2.0V. (6)Its base to emitter saturation voltage would be max 2.5V. (7)Its collector output capacitance would be typ 35pF.

It should be noted that the information about 2SD1409A contained herein is presented only as a guide for the applications of toshiba products. No responsibility is assumed by toshiba sorporation for any infringements of implication or otherwise under any intellectual property or other rights of toshiba corporation or others. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!