2SD1314

The 2SD1314 is a kind of NPN silicon triple diffused transistor.It is used for high power switching and motor control applications.

There are some features of 2SD1314.(1) high DC current gain(100); (2) low saturation voltage(2 V); (3) high speed.

What comes next is about maximum ratings of 2SD1314 at TA is 25.(1): collector-base voltage(VCBO) is 600 V; (2) collector-emitter voltage(VCEO) is 450 V; (3): emitter-base voltage(VEBO) is 6 V; (4): collector current(IC) for DC is 15 A and for pulse is 30 A; (5): base current(IB) is 1.0 A; (6): collector power dissipation(PC) is 150 W; (7): junction temperature(Tj) is 150 and storage temperature ranges from -55 to 150; (8): the maximum collector cutoff current is 1.0 mA when VCB is 600 V and IE is 0; (9): the maximum emitter cutoff current is 200 mA at VEB is 6 V and IC is 0; (10): the minimum current gain is 100 at VCE is 5 V and IC is 15 A; (11):  the maximum turn-on time is 1.0 s,the minimum storage time is 12 s and the minimum fall time is 3.0 s.