2SD1286-Z

The 2SD1286-Z is a kind of NPN silicon epitaxial transistor.It is designed for switching,especially in hybrid integrated circuits.

There are some features of 2SD1286-Z.(1) high HEF which is 2000 to 30000; (2) complement to 2SB963-Z.

Then is some information about absolute maximum ratings. (1): collector-to-base voltage(VCBO) is 60 V; (2): collector-to-emitter voltage(VCEO) is 60 V; (3): emitter-to-base voltage(VEBO) is 8 V; (4): collector current(IC) is 1 A; (5): total power dissipation(PT) is 2.0 W; (6): junction temperature is 150; (7): storage ambient temperature(TSTG) is from -55 to 150; (8): maximum collector cutoff current is 10 A at VCB is 60 V and IE is 0 A; (9): emmitter cutoff current is 1.0 mA at VEB is 5.0 V and IC is 0 A; (10): DC current gain is 1000 at VCE is 2.0 V and IC is 0.2 A; (11): maximum collector saturation voltage is 1.5 V at IC is 500 mA and IB is 0.5 mA; (12): base saturation voltage is 2.0 V at IC is 500 mA and IB is 0.5 mA.If you want to know more information such as the electrical characteristics about the 2SD1286-Z,please download the datasheet in www.seekic.com.