DescriptionThe 2SB899F is a medium power transistor(-80V,-0.7A).Features of the 2SB899F are :(1)high breakdown voltage,BVECO=-80V,and high current,-0.7A.; (2)complements the 2SD1767/2SD1859/2SD1200F. The absolute maximum ratings of the 2SB899F can be summarized as:(1)collector-base voltage:-80V; ...
2SB899F: DescriptionThe 2SB899F is a medium power transistor(-80V,-0.7A).Features of the 2SB899F are :(1)high breakdown voltage,BVECO=-80V,and high current,-0.7A.; (2)complements the 2SD1767/2SD1859/2SD1200F...
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The 2SB899F is a medium power transistor(-80V,-0.7A).Features of the 2SB899F are :(1)high breakdown voltage,BVECO=-80V,and high current,-0.7A.; (2)complements the 2SD1767/2SD1859/2SD1200F.
The absolute maximum ratings of the 2SB899F can be summarized as:(1)collector-base voltage:-80V; (2)collector-emitter voltage:-80V; (3)emitter-base voltage:-5V; (4)collector current:-0.7A; (5)collector power dissipation:5W(Tc=25); (6)junction temperature:150; (7)storage temperature:-55~150.
The electrical characteristics at TA=25°C of the 2SB899F can be summarized as:(1)collector-base breakdown voltage:-80V; (2)collector-emitter breakdown voltage:-80V; (3)emitter-base breakdown voltage:-5V; (4)collector cutoff current:-0.5A; (5)emitter cutoff current:-0.5A; (6)collector-emitter saturation voltage:-0.4V; (7)dc current transfer ratio:120~270; (8)transition frequency:100MHz; (9)output capacitance:20pF.If you want to know more information such as the electrical characteristics ,please download the datasheet in www.seekdatasheet.com .