2SB805

The 2SB805 is designed as one kind of PNP silicon epitaxial transistor that has only one point of features:High collector to emitter voltage: VCEO > -100V. The absolute maximum ratings of the 2SB805 can be summarized as:(1)Collector-base voltage: -100 V;(2)Collector-emitter voltage: -100 V;(3)Emitter-base voltage: -5 V;(4)Collector current: -0.7 A;(5)Collector current (pulse): -1.2 A;(6)Collector power dissipation: 2 W;(7)Junction temperature: 150 ;(8)Storage temperature: -55 to +150 .

The electrical characteristics of this device can be summarized as:(1)Collector cutoff current: -100 nA;(2)Emitter cutoff current: -100 nA;(3)DC current gain: 90 to 400;(4)Collector-emitter saturation voltage: -0.4 to -0.6 V;(5)Base-emitter saturation voltage: -0.9 to -1.5 V;(6)Base-emitter voltage: -550 to -650 mV;(7)Output capacitance: 14 pF;(8)Transition frequency: 75 MHz. If you want to know more information about the 2SB805, please download the datasheet in www.seekic.com or www.chinaicmart.com .