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2SB828

Features: ` Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max.` Wide ASO leading to high resistance to breakdown.` Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max.` Wide ASO leading to high resistance to breakdown.Application· Relay dri...

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SeekIC No. : 004221386 Detail

2SB828: Features: ` Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max.` Wide ASO leading to high resistance to breakdown.` Low-saturation collector-to-emitter voltage : VCE(sat...

2SB828 Data Sheet

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Part Number:
2SB828
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Product Details

Description



Features:

` Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max.
` Wide ASO leading to high resistance to breakdown.

` Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V(PNP), 0.4V(NPN) max.
` Wide ASO leading to high resistance to breakdown.




Application

· Relay drivers, high-speed inverters, converters, and other general high-current switching applications.




Pinout






Specifications

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO ()60 V
Collector-to-Emitter Voltage VCEO ()50 V
Emitter-to-Base Voltage VEBO ()6 V
Collector Current IC ()12 A
Collector Current (Pulse) ICP ()17 A
Collector Dissipation PC Tc=25°C 80 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg 55 to +150 °C


Absolute maximum ratings
VCEO [V] 50
IC [A] 12
PC Tc=25°C [W] 80
Electrical characteristics
hFE min 70
hFE max 280
VCE [V] 2
IC [A] 1
VCE (sat) max [V] 0.5
IC [A] 6
IB [A] 0.3
fT typ [MHz] 10





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