2SB817E

Features: • 2SB817E transistor is designed for use in general purpose power amplifier, applicationSpecifications Symbol Description 2SB817E Unit Conditions VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6.0 V ...

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SeekIC No. : 004221379 Detail

2SB817E: Features: • 2SB817E transistor is designed for use in general purpose power amplifier, applicationSpecifications Symbol Description 2SB817E Unit Conditions VCBO Collector-Base Vol...

floor Price/Ceiling Price

Part Number:
2SB817E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

• 2SB817E transistor is designed for use in general purpose power amplifier, application


Specifications

Symbol Description 2SB817E Unit Conditions
VCBO Collector-Base Voltage 160 V  
VCEO Collector-Emitter Voltage 140 V  
VEBO Emitter-Base Voltage 6.0 V  
IC Collector Current-Continuous 12 A  
ICM Collector Current-Peak 15 A  
Ptot Power Dissipation at TC=25 100 W  
Power Dissipation Derate above 25 0.8 W/  
RJC Thermal Resistance from Junction to Case 1.25 /W  
TJ,
TSTG
Operating and Storage Junction Temperature
Range
-55 to +150  



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