Features: • 2SB817E transistor is designed for use in general purpose power amplifier, applicationSpecifications Symbol Description 2SB817E Unit Conditions VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6.0 V ...
2SB817E: Features: • 2SB817E transistor is designed for use in general purpose power amplifier, applicationSpecifications Symbol Description 2SB817E Unit Conditions VCBO Collector-Base Vol...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Description | 2SB817E | Unit | Conditions |
VCBO | Collector-Base Voltage | 160 | V | |
VCEO | Collector-Emitter Voltage | 140 | V | |
VEBO | Emitter-Base Voltage | 6.0 | V | |
IC | Collector Current-Continuous | 12 | A | |
ICM | Collector Current-Peak | 15 | A | |
Ptot | Power Dissipation at TC=25 | 100 | W | |
Power Dissipation Derate above 25 | 0.8 | W/ | ||
RJC | Thermal Resistance from Junction to Case | 1.25 | /W | |
TJ, TSTG |
Operating and Storage Junction Temperature Range |
-55 to +150 |