Features: · Adoption of MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall-sized package permitting applied sets to be made small and slim.· High allowable power dissipation.Application· Relay drivers, lamp drivers, motor dr...
2SA2011: Features: · Adoption of MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall-sized package permitting applied sets to be made ...
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· Adoption of MBIT processes.
· Large current capacitance.
· Low collector-to-emitter saturation voltage.
· High-speed switching.
· Ultrasmall-sized package permitting applied sets to be made small and slim.
· High allowable power dissipation.
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
Collector-to-Base Voltage |
VCBO |
(-)15 |
V | |
Collector-to-Emitter Voltage |
VCES |
(-12)15 |
V | |
Emitter-to-Base Voltage |
VEBO |
(-)5 |
V | |
Collector Current |
IC |
(-)6 |
A | |
Collector Current (Pulse) |
ICP |
(-)9 |
A | |
Base Current |
IB |
(-)600 |
A | |
Collector Dissipation |
PC |
Mounted on a ceramic board 250mm2x0.8mm) |
1.3 |
W |
Tc=25°C |
3.5 |
W | ||
Junction Temperature |
Tj |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |
Absolute maximum ratings | |
---|---|
VCEO [V] | 12 |
IC [A] | 6 |
PC [W] | 3.5
Tc=25°C |
Electrical characteristics | |
---|---|
hFE min | 200 |
hFE max | 560 |
VCE [V] | 2 |
IC [A] | 0.5 |
VCE (sat) typ [V] | 0.19 |
VCE (sat) max [V] | 0.29 |
IC [A] | 3 |
IB [mA] | 60 |