2SA2009 Selling Leads, Price trend, 2SA2009 DataSheet download, circuit diagram from SeekIC.com

Features: • High collector to emitter voltage VCEO• Low noise voltage NVSpecifications Parameter Symbol Rating Unit Collector to base voltage VCBO -120 V Collector to emitter voltage VCEO -120 V Emitter to base voltage VEBO -5 V Peak collector current ICP ...

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SeekIC No. : 004220387 Detail

2SA2009: Features: • High collector to emitter voltage VCEO• Low noise voltage NVSpecifications Parameter Symbol Rating Unit Collector to base voltage VCBO -120 V Collector to em...

2SA2009 Data Sheet

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Part Number:: 2SA2009
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/6/11

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Recent History
What is this?

2SA2007 evaluate
Features: 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A)2) Low saturation vol...
2SA2010 evaluate
Features: • Low collector to emitter saturation voltage VCE(sat) , large current capacitance...
2SA2126-H evaluate
US $.33 - .47 / Piece

Transistors Bipolar (BJT) BIP PNP 3A 50V

Product Details

Description

Features:

• High collector to emitter voltage VCEO
• Low noise voltage NV

Specifications

Parameter	Symbol	Rating	Unit
Collector to base voltage	V_CBO	-120	V
Collector to emitter voltage	V_CEO	-120	V
Emitter to base voltage	V_EBO	-5	V
Peak collector current	I_CP	-50	mA
Collector current	I_C	-20	mA
Collector power dissipation	P_C	150	W
Junction temperature	T_j	150	°C
Storage temperature	T_stg	−55 to +150	°C

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2SA2009

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