2N7081220MISO Selling Leads, Price trend, 2N7081220MISO DataSheet download, circuit diagram from SeekIC.com

Features: • TO220 ISOLATED HERMETIC PACKAGE• LOW RDS(ON)• SIMPLE DRIVE REQUIREMENTSSpecifications VDS Drain Source Voltage 100V VGS Gate Source Voltage ±20V ID Continuous Drain Current TC = 25°C 11A TC = 100°C 7.7A IDM Pulsed Drain Current 1 48A ...

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SeekIC No. : 004219616 Detail

2N7081220MISO: Features: • TO220 ISOLATED HERMETIC PACKAGE• LOW RDS(ON)• SIMPLE DRIVE REQUIREMENTSSpecifications VDS Drain Source Voltage 100V VGS Gate Source Voltage ±20V ID C...

2N7081220MISO Data Sheet

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Part Number:: 2N7081220MISO
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Month Sales

268 Transactions

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Upload time: 2024/12/30

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Recent History
What is this?

2N7000 evaluate
US $.05 - .07 / Piece

MOSFET N-CHANNEL 60V 200mA
2N7000 AMO evaluate
MOSFET TRENCH 31V-99V G2
2N7000,126 evaluate
MOSFET N-CH 60V 300MA TO-92

Product Details

Description

Features:

• TO220 ISOLATED HERMETIC PACKAGE
• LOW RDS(ON)
• SIMPLE DRIVE REQUIREMENTS

Specifications

V_DS	Drain Source Voltage	100V
V_GS	Gate Source Voltage	±20V
I_D	Continuous Drain Current T_C = 25°C	11A
	T_C = 100°C	7.7A
I_DM	Pulsed Drain Current 1	48A
P_D	Power Dissipation T_C= 25°C	45W
	T_C = 100°C	18W
T_J,T_stg	Operating and Storage Temperature Range	55 to 150°C
T_L	Lead Temperature(1/16" from case for 10 sec.)	300°C

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2N7081220MISO

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