Transistors Bipolar (BJT) NPN Fast SW SS
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 20 V |
Emitter- Base Voltage VEBO : | 25 V | DC Collector/Base Gain hfe Min : | 20 |
Configuration : | Single | Mounting Style : | Through Hole |
Package / Case : | TO-18 |
The 2N706A is a kind of bipolar NPN device. It is available in a hermetically sealed TO18 metal package.
Then is about the technical parameters: (1)VCEO: 20 V max ; (2)IC(CONT): 0.01A max; (3)hFE: 20 min @ 10/10(VCE/IC); (4)ft: 200 MHz typ ; (5)PD: 0.3 W max.
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