2N7002 LTI

The 2N7002 LTI is designed as one kind of small signal MOSFET that is available in Pb-free package. The absolute maximum ratings of this device can be summarized as:(1)DrainSource Voltage: 60 Vdc;(2)DrainGate Voltage (RGS = 1.0 M): 60 Vdc;(3)GateSource Voltage Continuous: ±20 Vdc;(4)GateSource Voltage Nonrepetitive (tp 50 s): ±40 Vpk.

The thermal characteristics of 2N7002 LTI can be summarized as:(1)Total Device Dissipation FR5 Board: 225 mW;(2)Thermal Resistance, Junction to Ambient: 556 °C/W;(3)Total Device Dissipation: 300 mW;(4)Junction and Storage Temperature: -55 °C to +150 °C.

The electrical characteristics of the 2N7002 LTI can be summarized as:(1)DrainSource Breakdown Voltage: 60 V;(2)Zero Gate Voltage Drain Current: 1.0 uA;(3)GateBody Leakage Current, Forward: 100 nAdc;(4)GateBody Leakage Current, Reverse: -100 nAdc;(5)Gate Threshold Voltage: 1.0 to 2.5 Vdc;(6)OnState Drain Current: 500 mA;(7)Static DrainSource OnState Voltage: 3.75 V. If you want to know more information about the 2N7002 LTI, please download the datasheet in www.seekic.com or www.chinaicmart.com .