2N7002W

MOSFET N-Chan Enhancement Mode Field Effect

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SeekIC No. : 00147968 Detail

2N7002W: MOSFET N-Chan Enhancement Mode Field Effect

floor Price/Ceiling Price

US $ .1~.23 / Piece | Get Latest Price
Part Number:
2N7002W
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Unit Price
  • $.23
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  • Processing time
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Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.115 A
Resistance Drain-Source RDS (on) : 7500 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-323-3 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 7500 mOhms at 5 V
Package / Case : SOT-323-3
Continuous Drain Current : 0.115 A


Pinout






Specifications

Part Number 2N7002W
Config/
Polarity
N
PD
(W)
0.2
VDSS
(V)
60
VGSS (+/-)
(V)
20
ID
(A)
0.115
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V
RDS(on) Max () @ VGS; 5V 7.5
RDS(on) Max () @ VGS; 10.0V
VGS(th)
(V)
2
Ciss (typ)
(pF)
22
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V





Parameters:

Technical/Catalog Information2N7002W
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C115mA
Rds On (Max) @ Id, Vgs7.5 Ohm @ 50mA, 5V
Input Capacitance (Ciss) @ Vds 50pF @ 25V
Power - Max200mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-323
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N7002W
2N7002W
2N7002WTR ND
2N7002WTRND
2N7002WTR



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