MOSFET N-Chan Enhancement Mode Field Effect
2N7002W: MOSFET N-Chan Enhancement Mode Field Effect
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.115 A | ||
Resistance Drain-Source RDS (on) : | 7500 mOhms at 5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-323-3 | Packaging : | Reel |
Part Number | 2N7002W |
Config/ Polarity |
N |
PD (W) |
0.2 |
VDSS (V) |
60 |
VGSS (+/-) (V) |
20 |
ID (A) |
0.115 |
RDS(on) Max () @ VGS; 1.8V | |
RDS(on) Max () @ VGS; 2.5V | |
RDS(on) Max () @ VGS; 4.0V | |
RDS(on) Max () @ VGS; 4.5V | |
RDS(on) Max () @ VGS; 5V | 7.5 |
RDS(on) Max () @ VGS; 10.0V | |
VGS(th) (V) |
2 |
Ciss (typ) (pF) |
22 |
Qg (typ) (nC) @ VGS; 4.5V |
|
Qg (typ) (nC) @ VGS; 5V |
|
Qg (typ) (nC) @ VGS; 10V |
Technical/Catalog Information | 2N7002W |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 115mA |
Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 50mA, 5V |
Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
Power - Max | 200mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SOT-323 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2N7002W 2N7002W 2N7002WTR ND 2N7002WTRND 2N7002WTR |