2N7002W-7-F

MOSFET 60V 200mW

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SeekIC No. : 00150743 Detail

2N7002W-7-F: MOSFET 60V 200mW

floor Price/Ceiling Price

US $ .09~.42 / Piece | Get Latest Price
Part Number:
2N7002W-7-F
Mfg:
Diodes Inc.
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.42
  • $.28
  • $.13
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.115 A
Resistance Drain-Source RDS (on) : 7500 mOhms at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-323 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 7500 mOhms at 5 V
Package / Case : SOT-323
Continuous Drain Current : 0.115 A


Description

The 2N7002W-7-F is a type of N-channel enhancement mode fifled effect transistor.

Features of the 2N7002W-7-F are:(1)low on-resistance;(2)low gate threshold voltage;(3)low input capacitance;(4)fa st switching speed;(5)low input/output leakage;(6)ultra-small surface mount package;(7)lead free/RoHS compliant (No purposefully added lead).

The absolute maximum ratings and electrical characteristics(TA = 25)of the 2N7002W-7-F can be summarized as:(1):drain-source voltage is 60 V;(2):drain-gate voltage is 60 V when Rgs is 1.0M or less than 1.0M;(3):gate-sour ce voltage(continuous) is ±20V;(4):drain current(Continuous) is 115mA; (5):total power dissipation is 200mW when  Derating above TA is 25°C ;(6):thermal resistance, junction to ambient is 625 K/W;(7):operating and storage temp erature Ranges from -55°C to +150°C.Electrical characteristics:(1)drain-source breakdown voltage is 60V min and 70V max when VGS is 0V and ID is 10uA;(2):gate-body leakage is±10 nA max when VGS is±20V and VDS is 0V;(3): gate threshold voltage is 1.0V min and 2.0 V max when VDS is VGS and ID is 250uA;(4):input capacitance is 22pF typ and 50 pF max when VDS is 25V, VGS is 0V and f is 1.0MHz;(5):turn-on delay time tD(ON) is 7.0ns typ and 20ns max when VDD is 30V, ID is 0.2A,RL is 150, VGEN is 10V and RGEN is 25.etc.




Parameters:

Technical/Catalog Information2N7002W-7-F
VendorDiodes Inc (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C115mA
Rds On (Max) @ Id, Vgs7.5 Ohm @ 50mA, 5V
Input Capacitance (Ciss) @ Vds 50pF @ 25V
Power - Max200mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs-
Package / CaseSOT-323
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N7002W 7 F
2N7002W7F
2N7002W FDIDKR ND
2N7002WFDIDKRND
2N7002W-FDIDKR



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