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2N7002VC

Features: · Dual N-Channel MOSFET· Low On-Resistance· Low Gate Threshold Voltage· Low Input Capacitance· Fast Switching Speed· Low Input/Output Leakage· Ultra-Small Surface Mount Package· Lead Free By Design/RoHS Compliant · Green Device PinoutSpecifications Part Number 2N7002VC Config/...

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SeekIC No. : 004219614 Detail

2N7002VC: Features: · Dual N-Channel MOSFET· Low On-Resistance· Low Gate Threshold Voltage· Low Input Capacitance· Fast Switching Speed· Low Input/Output Leakage· Ultra-Small Surface Mount Package· Lead Free ...

2N7002VC Data Sheet

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Part Number:
2N7002VC
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Dual N-Channel MOSFET
· Low On-Resistance
· Low Gate Threshold Voltage
· Low Input Capacitance
· Fast Switching Speed
· Low Input/Output Leakage
· Ultra-Small Surface Mount Package
· Lead Free By Design/RoHS Compliant
· "Green Device"




Pinout

Connection Diagram




Specifications

Part Number 2N7002VC
Config/
Polarity		 2 x N
PD
(W)		 0.15
VDSS
(V)		 60
VGSS (+/-)
(V)		 20
ID
(A)		 0.28
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V
RDS(on) Max () @ VGS; 5V 7.5
RDS(on) Max () @ VGS; 10.0V
VGS(th)
(V)		 2.5
Ciss (typ)
(pF)		 50(Max)
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V


Characteristic Symbol Value Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage RGS1.0M
VDGR
60
V
Gate-Source Voltage Continuous
Pulsed
VGSS
±20
±40
V
Drain Current Continuous
ID
280
mA
Drain Current Pulsed
IDM
1.5
A
Total Power Dissipation
Pd
150
mW
Thermal Resistance, Junction to Ambient
RJA
833
/W
Operating and Storage Temperature Range
TJ,TSTG
-55 to +150





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