2N7002V

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 0.28 A
Resistance Drain-Source RDS (on) : 7500 mOhms at 5 V
Package / Case : SOT-563F-6


Features:

Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 3)


Pinout




Specifications

Characteristic	Symbol	Value	Units
Drain-Source Voltage	VDSS	60	V
Drain-Gate Voltage RGS 1.0M	VDGR	60	V
Gate-Source Voltage (Note 3) Continuous Pulsed	VGSS	±20 ±40	V
Drain Current (Note 3) Continuous	ID	280	mA
Drain Current (Note 3) Pulsed	IDM	1.5	A
Total Power Dissipation	Pd	150	mW
Thermal Resistance, Junction to Ambient	PJA	833	°C/W
Operating and Storage Temperature Range	Tj,TSTG	-55 to +150	°C

Parameters:

Technical/Catalog Information	2N7002V
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 N-Channel (Dual)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	280mA
Rds On (Max) @ Id, Vgs	7.5 Ohm @ 50mA, 5V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	250mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-563F
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N7002V 2N7002V 2N7002VTR ND 2N7002VTRND 2N7002VTR