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2N7002M

Features: ·High density cell design for low RDS(ON).·Voltage controlled small signal switch.·Rugged and reliable.·High saturation current capability.Application·N-Channel Enhancement Mode Field Effect Transistor·For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)...

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SeekIC No. : 004219611 Detail

2N7002M: Features: ·High density cell design for low RDS(ON).·Voltage controlled small signal switch.·Rugged and reliable.·High saturation current capability.Application·N-Channel Enhancement Mode Field Effe...

2N7002M Data Sheet

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Part Number:
2N7002M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·High density cell design for low RDS(ON).
·Voltage controlled small signal switch.
·Rugged and reliable.
·High saturation current capability.




Application

·N-Channel Enhancement Mode Field Effect Transistor
·For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.)




Pinout

Connection Diagram




Specifications

Symbol Parameter Value Units
VDS Drain-Source voltage 60 V
ID Drain Current 115 mA
PD Power Dissipation 150 mW
RJA Thermal Resistance. Junction to Ambient Air 625 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150





Description

High cell density, DMOS technology. 2N7002M has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. 2N7002M is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.






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