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2N7002KA

Features: ·Logic level compatible ·Very fast switching·Subminiature surface-mounted package ·Gate-source ESD protection diodesApplication·Relay driver ·High-speed line driverPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 Tj 150 - 60 ...

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SeekIC No. : 004219606 Detail

2N7002KA: Features: ·Logic level compatible ·Very fast switching·Subminiature surface-mounted package ·Gate-source ESD protection diodesApplication·Relay driver ·High-speed line driverPinoutSpecifications ...

2N7002KA Data Sheet

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Part Number:
2N7002KA
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Logic level compatible
·Very fast switching
·Subminiature surface-mounted package
·Gate-source ESD protection diodes


Application

·Relay driver
·High-speed line driver


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 Tj 150 - 60 V
VDGR drain-gate voltage (DC) 25 Tj 150 ; RGS = 20 kW - 60 V
VGS gate-source voltage   - ±15 V
VGSM peak gate-source voltage tp £ 50 ms; pulsed; duty cycle = 25 % - ±40 V
ID drain current Tsp = 25 ; VGS = 10 V; see Figure 2 and 3 - 320 mA
Tsp = 100 ; VGS = 10 V; see Figure 2 - 200 mA
IDM peak drain current Tsp = 25 ; pulsed; tp 10 ms; see Figure 3 - 1.28 A
Ptot total power dissipation Tsp = 25 ; see Figure 1 - 0.83 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode          
IS source current Tsp = 25 - 300 mA
ISM peak source current Tsp = 25 ; pulsed; tp £ 10 ms - 1.2 A



Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.


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