Position: Home  > All Categories> Integrated Circuits (ICs) > 2N7002KA

2N7002KA

Features: ·Logic level compatible ·Very fast switching·Subminiature surface-mounted package ·Gate-source ESD protection diodesApplication·Relay driver ·High-speed line driverPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 Tj 150 - 60 ...

product image

2N7002KA Picture
See larger image
SeekIC No. : 004219606 Detail

2N7002KA: Features: ·Logic level compatible ·Very fast switching·Subminiature surface-mounted package ·Gate-source ESD protection diodesApplication·Relay driver ·High-speed line driverPinoutSpecifications ...

2N7002KA Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
2N7002KA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/30

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Logic level compatible
·Very fast switching
·Subminiature surface-mounted package
·Gate-source ESD protection diodes


Application

·Relay driver
·High-speed line driver


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage 25 Tj 150 - 60 V
VDGR drain-gate voltage (DC) 25 Tj 150 ; RGS = 20 kW - 60 V
VGS gate-source voltage   - ±15 V
VGSM peak gate-source voltage tp £ 50 ms; pulsed; duty cycle = 25 % - ±40 V
ID drain current Tsp = 25 ; VGS = 10 V; see Figure 2 and 3 - 320 mA
Tsp = 100 ; VGS = 10 V; see Figure 2 - 200 mA
IDM peak drain current Tsp = 25 ; pulsed; tp 10 ms; see Figure 3 - 1.28 A
Ptot total power dissipation Tsp = 25 ; see Figure 1 - 0.83 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode          
IS source current Tsp = 25 - 300 mA
ISM peak source current Tsp = 25 ; pulsed; tp £ 10 ms - 1.2 A



Description

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Cable Assemblies
CS1W-CN114
XW2Z-500T
Tools
TCP202
G084SN05 V.3
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
Transformers
TM-09210
BV222-1-00992
Prototyping Products
AVT4168
DE1
View more