2N7002K

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Package / Case : SOT-23-3
Continuous Drain Current : 0.115 A
Resistance Drain-Source RDS (on) : 2000 mOhms


Specifications

Part Number	2N7002K
Config/ Polarity	N
PD (W)	0.35
VDSS (V)	60
VGSS (+/-) (V)	20
ID (A)	0.3
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V
RDS(on) Max () @ VGS; 5V	3
RDS(on) Max () @ VGS; 10.0V	2
VGS(th) (V)	2.5
Ciss (typ) (pF)	50(Max)
Qg (typ) (nC) @ VGS; 4.5V
Qg (typ) (nC) @ VGS; 5V
Qg (typ) (nC) @ VGS; 10V

Description

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS 2N7002K. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of 2N7002K.

N-Channel 60-V (D-S) MOSFET




Parameters:

Technical/Catalog Information	2N7002K
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	115mA
Rds On (Max) @ Id, Vgs	2 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	50pF @ 25V
Power - Max	350mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-23
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N7002K 2N7002K 2N7002KTR ND 2N7002KTRND 2N7002KTR