2N7002ET1G

MOSFET NFET SOT23 60V 115mA 7mOhm

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2N7002ET1G: MOSFET NFET SOT23 60V 115mA 7mOhm

floor Price/Ceiling Price

US $ .03~.1 / Piece | Get Latest Price
Part Number:
2N7002ET1G
Mfg:
ON Semiconductor
Supply Ability:
5000

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.26 A
Resistance Drain-Source RDS (on) : 2500 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-23 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 2500 mOhms
Continuous Drain Current : 0.26 A


Parameters:

Technical/Catalog Information2N7002ET1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C260mA
Rds On (Max) @ Id, Vgs2.5 Ohm @ 240mA, 10V
Input Capacitance (Ciss) @ Vds 26.7pF @ 25V
Power - Max300mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs0.81nC @ 5V
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N7002ET1G
2N7002ET1G
2N7002ET1GOSDKR ND
2N7002ET1GOSDKRND
2N7002ET1GOSDKR



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