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2N7002DW

MOSFET N-Chan Enhancement Mode Field Effect

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2N7002DW: MOSFET N-Chan Enhancement Mode Field Effect

2N7002DW Data Sheet

floor Price/Ceiling Price

US $ .05~.08 / Piece | Get Latest Price
Part Number:
2N7002DW
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 25~100
  • 100~250
  • Unit Price
  • $.08
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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.115 A
Resistance Drain-Source RDS (on) : 7500 mOhms at 5 V Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SC-70-6 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 60 V
Package / Case : SC-70-6
Resistance Drain-Source RDS (on) : 7500 mOhms at 5 V
Continuous Drain Current : 0.115 A


Features:

Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package




Pinout

Connection Diagram






Specifications

Characteristic Symbol 2N7002DW Units
Drain-Source Voltage VDSS 60 V
Drain-Gate VoltageRGS1.0M VDGR 60 V
Gate-Source Voltage (Note 1) Continuous
Pulsed		 VGSS ±20
±40		 V
Drain Current (Note 1)Continuous
Continuous @ 100°C
Pulsed		 ID 115
73
800		 mA
Total Power Dissipation
Derating above TA= 25°C (Note 1)		 Pd 200
1.60		 mW
mW/°C
Thermal Resistance, Junction to Ambient RJA
 625 K/W
Operating and Storage Temperature Range Tj,TSTG -55 to +150 °C


Part Number 2N7002DW
Config/
Polarity		 2 x N
PD
(W)		 0.2
VDSS
(V)		 60
VGSS (+/-)
(V)		 20
ID
(A)		 0.115
RDS(on) Max () @ VGS; 1.8V
RDS(on) Max () @ VGS; 2.5V
RDS(on) Max () @ VGS; 4.0V
RDS(on) Max () @ VGS; 4.5V
RDS(on) Max () @ VGS; 5V 7.5
RDS(on) Max () @ VGS; 10.0V
VGS(th)
(V)		 2
Ciss (typ)
(pF)		 50
Qg (typ) (nC)
@ VGS; 4.5V
Qg (typ) (nC)
@ VGS; 5V
Qg (typ) (nC)
@ VGS; 10V





Parameters:

Technical/Catalog Information2N7002DW
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C115mA
Rds On (Max) @ Id, Vgs7.5 Ohm @ 50mA, 5V
Input Capacitance (Ciss) @ Vds 50pF @ 25V
Power - Max200mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs-
Package / CaseSC-70-6, SC-88, SOT-323-6, SOT-363
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N7002DW
2N7002DW
2N7002DWDKR ND
2N7002DWDKRND
2N7002DWDKR



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