MOSFET 60V 200mW
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 70 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 115 mA | ||
Resistance Drain-Source RDS (on) : | 7.5 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-563 | Packaging : | Reel |
Technical/Catalog Information | 2N7002-7 |
Vendor | Diodes Inc (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 115mA |
Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 50mA, 5V |
Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
Power - Max | 300mW |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | 2N7002 7 2N70027 2N7002DICT ND 2N7002DICTND 2N7002DICT |