MOSFET 60V 200mA N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.2 A | ||
Resistance Drain-Source RDS (on) : | 5000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-92 | Packaging : | Reel |
Technical/Catalog Information | 2N7000RLRPG |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25° C | 200mA |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 60pF @ 25V |
Power - Max | 350mW |
Packaging | Tape & Box (TB) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | TO-92-3, TO-226AA (Formed Leads) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2N7000RLRPG 2N7000RLRPG |