2N7000RLRA

MOSFET 60V 200mA N-Channel

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SeekIC No. : 00166637 Detail

2N7000RLRA: MOSFET 60V 200mA N-Channel

floor Price/Ceiling Price

Part Number:
2N7000RLRA
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 5000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-92
Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 5000 mOhms


Pinout

  Connection Diagram


Description

The 2N7000RLRA is a kind of Small Signal MOSFET.

Then is the maximum ratings of 2N7000RLRA: (1)Drain Source Voltage, VDSS: 60 Vdc; (2)DrainGate Voltage (RGS = 1.0 MW), VDGR: 60 Vdc; (3)GateSource Voltage: Continuous, VGS: ±20 Vdc; Nonrepetitive (tp 50 s), VGSM: ±40 Vpk; (4)Drain Current: Continuous, ID: 200 mAdc; Pulsed, VDM: 500 mAdc; (5)Total Power Dissipation @ TC = 25, PD: 350 mW; (6)Operating and Storage Temperature Range, TJ, Tstg: 55 to +150.

What comes next is about the electrical characteristics of 2N7000RLRA: (1)Zero Gate Voltage Drain Current, IDSS: 1.0Adc max at VDS = 48 Vdc, VGS = 0 and 1.0  mAdc at VDS = 48 Vdc, VGS = 0, TJ = 125; (2)GateBody Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0), IGSSF: -10 nAdc max; (3)Gate Threshold Voltage (VDS = VGS, ID = 1.0 mAdc), VGS(th): 0.8 Vdc min and 3.0 Vdc max; (4)Static DrainSource OnResistance, rDS(on): 5.0 Ohm max at VGS = 10 Vdc, ID = 0.5 Adc and 6.0 Ohm at VGS = 4.5 Vdc, ID = 75 mAdc; (5)DrainSource OnVoltage, VDS(on): 2.5 Vdc max at VGS = 10 Vdc, ID = 0.5 Adc and 0.45 Vdc at VGS = 4.5 Vdc, ID = 75 mAdc; (6)OnState Drain Current (VGS = 4.5 Vdc, VDS = 10 Vdc), Id(on): 75 mAdc min; (7)Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc), gfs: 100 mhos max.




Parameters:

Technical/Catalog Information2N7000RLRA
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C200mA
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 60pF @ 25V
Power - Max350mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92-3, TO-226AA (Formed Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2N7000RLRA
2N7000RLRA
2N7000RLRAOSTR ND
2N7000RLRAOSTRND
2N7000RLRAOSTR



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