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2N7000BU

MOSFET 60V N-Channel Sm Sig

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2N7000BU: MOSFET 60V N-Channel Sm Sig

2N7000BU Data Sheet

floor Price/Ceiling Price

US $ .08~.26 / Piece | Get Latest Price
Part Number:
2N7000BU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.26
  • $.19
  • $.12
  • $.08
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 60 V
Package / Case : TO-92
Continuous Drain Current : 0.2 A
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

Fast Switching Times
Improved Inductive Ruggedness
Lower  Input  Capacitance
Extended  Safe  Operating  Area
Improved High Temperature Reliability


Specifications

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 60 V
ID Continuous Drain Current (TC=25) 200 mA
Continuous Drain Current (TC=100) 110
IDM Drain Current-Pulsed 1000 mW
VGS Gate-to-Source Voltage ±30 mW/
PD Total Power Dissipation (TC=25)
Linear Derating Factor
 400 3.2 mA
TL,TSTG
 Operating Junction and
Storage Temperature Range		 - 55 to +150 VDSS V
TL Maximum Lead Temp. for Soldering Purposes, 1/8? from case for 5-seconds 300



Parameters:

Technical/Catalog Information2N7000BU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C200mA
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 30pF @ 25V
Power - Max400mW
PackagingBulk
Gate Charge (Qg) @ Vgs-
Package / CaseTO-92
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N7000BU
2N7000BU



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