2N6536

The 2N6536(Silicon NPN Power Transistors) can be used as power switching, hammer drivers, audio amplifiers and series and shunt regulators, which is with TO-66 package and DARLINGTON.
Some parameters of 2N6536 are got at Ta=25 . V_CBO (Collector-base voltage, Open emitter )=100 V, V_CEO(Collector-emitter voltage, Open base)=100 V, V_EBO(Emitter-base voltage, Open collector)=5V, I_CM(Collector, current-Peak)=15A, I_C(Collector current)=8A, I_CM(Collector current-Peak)=15A, I_B(Base current)=0.25A, P_T(Total power dissipation, T_C=25 )=36W, T_j(Junction temperature)=150, T_stg(Storage temperature)=-65 to 150.
The traits of 2N6536 at T_j=25 unless otherwise specified are also known. V _CEO(SUS) (Collector-emitter sustaining voltage, I_C=0.2A ; I_B=0)=100V(min), V _CEsat-1 (Collector-emitter saturation voltage, I_C=5A ;I_B=10mA)=2.0 V(max), V _CEsat-2(Collector-emitter saturation voltage, I_C=8A; I_B=80mA)=3.0 V(max), V _BE-1(Base -emitter on voltage, I_C=5A ; V_CE=3V)=2.8 V(max), V _BE-2 (Base -emitter on voltage, I_C=8A ; V_CE=3V)=4.5 V(Max), I_CEV (Collector cut-off current, V_CE=100V; V_BE=-1.5V/T_C=125)=0.5/5.0mA(max), I_CEO(Collector cut-off current, V_CE=100V; I_B=0)=1.0 m(max), I _EBO (Emitter cut-off current, V_EB=5V; IC=0)=5.0 mA(max), h _FE-1 (DC current gain, I_C=5A ; V_CE=3V)=1000(min)/10000(max), h _FE-2 (DC current gain, I_C=8A ; V_CE=3V)=100(min)/5000(max), V_F(Diode forward voltage, I_F=8A)=5.0 V(max).
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