2N6504 Series

Features: SpecificationsDescription This is the description about 2N6504 Series of Silicon Controlled Rectifiers, Reverse Blocking Thyristors which is designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Here are the ...

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SeekIC No. : 004219491 Detail

2N6504 Series: Features: SpecificationsDescription This is the description about 2N6504 Series of Silicon Controlled Rectifiers, Reverse Blocking Thyristors which is designed primarily for half-wave ac control app...

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Part Number:
2N6504 Series
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:






Specifications






Description

      This is the description about 2N6504 Series of Silicon Controlled Rectifiers, Reverse Blocking Thyristors which is designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
      Here are the features of 2N6504 Series : Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability; Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability; Blocking Voltage to 800 Volts; 300 A Surge Current Capability; Pb−Free Packages are Available*.
      The Maximum Ratings and Electrical Characteristics of 2N6504 Series are these (@TA=25°C unless otherwise specified). On-State Current RMS (180° Conduction Angles; TC = 85°C) IT(RMS) is 25 A. Average On-State Current (180° Conduction Angles; TC = 85°C) IT(AV) is 16 A. Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) ITSM is 250 A. Forward Peak Gate Power (Pulse Width 1.0 _s, TC = 85°C) PGM is 20 W. Forward Average Gate Power (t = 8.3 ms, TC = 85°C) PG(AV) is 0.5 W. Forward Peak Gate Current (Pulse Width 1.0 _s, TC = 85°C) IGM is 2.0 A. Operating Junction Temperature Range TJ is from −40 to +125 °C. Storage Temperature Range Tstg is from −40 to +150 °C. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
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