2N6518BU

Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

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SeekIC No. : 00212265 Detail

2N6518BU: Transistors Bipolar (BJT) PNP Si Transistor Epitaxial

floor Price/Ceiling Price

Part Number:
2N6518BU
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 250 V
Emitter- Base Voltage VEBO : - 5 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 50 Configuration : Single
Maximum Operating Frequency : 200 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Bulk    

Description

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Collector- Emitter Voltage VCEO Max : 250 V


Parameters:

Technical/Catalog Information2N6518BU
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypePNP
Voltage - Collector Emitter Breakdown (Max)250V
Current - Collector (Ic) (Max)500mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 30mA, 10V
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Frequency - Transition200MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N6518BU
2N6518BU



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