2N6517RLRPG

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 350 V
DC Collector/Base Gain hfe Min : 20 at 1 mA at 10 V


Parameters:

Technical/Catalog Information	2N6517RLRPG
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	500mA
Power - Max	1.5W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1mA, 10V
Vce Saturation (Max) @ Ib, Ic	1V @ 5mA, 50mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Formed Leads)
Packaging	Tape & Box (TB)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N6517RLRPG 2N6517RLRPG