Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
2N6517BU: Transistors Bipolar (BJT) NPN Si Transistor Epitaxial
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 350 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.5 A |
DC Collector/Base Gain hfe Min : | 30 | Configuration : | Single |
Maximum Operating Frequency : | 200 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Bulk |
Technical/Catalog Information | 2N6517BU |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 350V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 625mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
Frequency - Transition | 200MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Through Hole |
Package / Case | TO-92 |
Packaging | Bulk |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | 2N6517BU 2N6517BU |