On-State RMS Current (It RMS)
:
Maximum Gate Peak Inverse Voltage
:
Mounting Style
: Through Hole
Packaging
: Bulk
Gate Trigger Voltage (Vgt)
: 1.5 V
Rated Repetitive Off-State Voltage VDRM
: 400 V
Off-State Leakage Current @ VDRM IDRM
: 0.01 mA
Holding Current (Ih Max)
: 40 mA
Gate Trigger Current (Igt)
: 30 mA
Package / Case
: TO-220AB
Forward Voltage Drop
: 1.8 V at 50 A
Breakover Current IBO Max
: 250 A
Features: • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code
Specifications
| Rating |
Symbol |
Value |
Unit |
*Peak Repetitive OffState Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
TJ = 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509 |
VDRM. |
|
Volts |
|
VRRM |
|
|
|
50 |
|
100 |
|
400 |
|
600 |
|
800 |
On-State RMS Current
(180° Conduction Angles; TC = 85°C) |
IT(RMS)
|
25
|
A |
Average On-State Current
(180° Conduction Angles; TC = 85°C) |
IT(AV) |
16 |
A |
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C) |
ITSM |
250 |
A |
Forward Peak Gate Power
(Pulse Width 1.0s, TC = 85°C) |
PGM |
20 |
Watts |
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C) |
PG(AV) |
0.5 |
Watt |
Forward Peak Gate Current
(Pulse Width 1.0s, TC = 85°C) |
IGM |
2.0 |
A |
| Operating Junction Temperature Range |
TJ |
40 to+125 |
°C |
| Storage Temperature Range |
Tstg |
40 to+150 |
°C |
*Indicates JEDEC Registered Data
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Parameters: | Technical/Catalog Information | 2N6507 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| SCR Type | Standard Recovery |
| Voltage - Off State | 400V |
| Current - On State (It (RMS)) (Max) | 25A |
| Current - On State (It (AV)) (Max) | 16A |
| Current - Gate Trigger Current (Igt) (Max) | 30mA |
| Current - Hold (Ih) (Max) | 40mA |
| Current - Non Rep. Surge 50/60Hz (Itsm) | 250A @ 60Hz |
| Voltage - Gate Trigger (Vgt) (Max) | 1.5V |
| Mounting Type | Through Hole |
| Package / Case | TO-220AB |
| Packaging | Bulk |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2N6507
2N6507
2N6507OS ND
2N6507OSND
2N6507OS
|
2N6507 Data Sheet
