2N6505

SCRs 100V 25A

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2N6505 Picture
SeekIC No. : 00199349 Detail

2N6505: SCRs 100V 25A

floor Price/Ceiling Price

Part Number:
2N6505
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Quick Details

Breakover Current IBO Max : 250 A Rated Repetitive Off-State Voltage VDRM : 100 V
Off-State Leakage Current @ VDRM IDRM : 0.01 mA Forward Voltage Drop : 1.8 V at 50 A
Gate Trigger Voltage (Vgt) : 1.5 V Gate Trigger Current (Igt) : 30 mA
Holding Current (Ih Max) : 40 mA Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Bulk    

Description

On-State RMS Current (It RMS) :
Maximum Gate Peak Inverse Voltage :
Mounting Style : Through Hole
Packaging : Bulk
Gate Trigger Voltage (Vgt) : 1.5 V
Off-State Leakage Current @ VDRM IDRM : 0.01 mA
Holding Current (Ih Max) : 40 mA
Gate Trigger Current (Igt) : 30 mA
Package / Case : TO-220AB
Forward Voltage Drop : 1.8 V at 50 A
Rated Repetitive Off-State Voltage VDRM : 100 V
Breakover Current IBO Max : 250 A


Features:

• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code




Specifications

Rating
Symbol
Value
Unit
*Peak Repetitive OffState Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
TJ = 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM.
Volts
VRRM
50
100
400
600
800
On-State RMS Current
(180° Conduction Angles; TC = 85°C)
IT(RMS)
25
A
Average On-State Current
(180° Conduction Angles; TC = 85°C)
IT(AV)
16
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)
ITSM
250
A
Forward Peak Gate Power
(Pulse Width 1.0s, TC = 85°C)
PGM
20
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C)
PG(AV)
0.5
Watt
Forward Peak Gate Current
(Pulse Width 1.0s, TC = 85°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
40 to+125
°C
Storage Temperature Range
Tstg
40 to+150
°C


*Indicates JEDEC Registered Data
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.




Parameters:

Technical/Catalog Information2N6505
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
SCR TypeStandard Recovery
Voltage - Off State100V
Current - On State (It (RMS)) (Max)25A
Current - On State (It (AV)) (Max)16A
Current - Gate Trigger Current (Igt) (Max)30mA
Current - Hold (Ih) (Max)40mA
Current - Non Rep. Surge 50/60Hz (Itsm)250A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max)1.5V
Mounting TypeThrough Hole
Package / CaseTO-220AB
PackagingBulk
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names 2N6505
2N6505
2N6505OS ND
2N6505OSND
2N6505OS



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