2N5245

Resistance Drain-Source RDS (on) :
Drain Source Voltage VDS :
Gate-Source Cutoff Voltage :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Gate-Source Breakdown Voltage : - 30 V
Maximum Drain Gate Voltage : 30 V
Drain Current (Idss at Vgs=0) : 5 mA to 15 mA
Power Dissipation : 350 mW
Packaging : Bulk
Forward Transconductance gFS (Max / Min) : 0.0045 S to 0.011 S


Features:

• This device is designed for HF/VHF mixer/amplifier and applications where process 50is not adequate. Sufficient gain and low noise for sensitive receivers.
• Sourced from process 90.

Specifications

Symbol	Parameter	Ratings	Units
VDG	Drain-Gate Voltage	30	V
VGS	Gate-Source Voltage	-30	V
IGF	Forward Gate Current	10	mA
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 ~ 150	°C

* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Parameters:

Technical/Catalog Information	2N5245
Vendor	Fairchild Semiconductor
Category	Transistors, FETs, IGBTs
Mounting Type	Through Hole
Package Name	* TO-92, 3-lead
Package Name	TO-92
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30.0 V [Nom]
Voltage Gate to Source (Vgs)	30.0 V [Max]
Continuous Drain Current (Id)	10.00 mA [Nom]
Power Dissipation	350.000 mW [Max]
Packaging	Bulk
Has Digi-Reel	Not TR
Junction to Ambient	357.000 °C/W [Nom]
Junction to Case	125.000 °C/W [Nom]
Operating Junction Temperature	-55 °C [Min]
Operating Junction Temperature	150 °C [Max]
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5245 2N5245