2N5202

The 2N5202 is a high-speed epitaxial-collector silicon N-P-N planar transistors.

Features of the 2N5202 are:(1)maximum-area-of-operatopm curves for dc and pulse operation;(2)high substaining voltage;(3)total saturated transition time less than 1s for 2N5202.

The absolute maximum ratings of the  2N5202 can be summarized as:(1)collector to base voltage,V_CBO:100V;(2)Collector to emitter sustaining voltage:V_CER(sus)...75^*V(with external base-to-emitter resistance{R_BE=50}),V_CEO(sus)...50V(with base open);(3)Base to emitter voltage,V_EBO:6V;(4)continuous collector current:I_C=4A;(5)operating& Storage junction temperature range,T_j.T_stg:-65 to +200;(6)peak collector current,I_CM:4A;(7)transistor dissipation:,P_T:at case temperature(T_C)=25°C...35Wat case temperature above 25°C...derate linearly at 0.2W/°Cfor other conditions..see figs.1,3 and 4;(8)continuous base current,IB:2A;(9)pin temperature:1/32 in.(0.8mm)from seating plane for 10s max.--235°C.*in accordance with JEDEC registration data formats JS-6 RDF-1.

If you want to know more information such as the electrical characteristics about the  2N5202, please download the datasheet in www.seekic.com or www.chinaicmart.com .