Features: • Hermetically sealed TO-5 metal can• Also available in chip configuration• Chip geometry 3111• Reference document: MIL-PRF-19500/394Application• General purpose• Low power, High voltage• NPN silicon transistorSpecifications Parameter ...
2N5238: Features: • Hermetically sealed TO-5 metal can• Also available in chip configuration• Chip geometry 3111• Reference document: MIL-PRF-19500/394Application• General purp...
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• Hermetically sealed TO-5 metal can
• Also available in chip configuration
• Chip geometry 3111
• Reference document: MIL-PRF-19500/394
Parameter |
Symbol |
Rating |
Unit |
Collector-Emitter Voltage |
VCEO |
170 |
Volts |
Collector-Base Voltage |
VCBO |
200 |
Volts |
Emitter-Base Voltage |
VEBO |
10 |
Volts |
Collector Current,Continuous |
IC |
10 |
A |
Power Dissipation, TA = 25 |
PT |
1 |
W |
Power Dissipation, TC = 25 |
PT |
5 |
W |
Thermal Resistance |
RJA |
.175 |
/W |
Operating Junction Temperature |
TJ |
-65 to +200 |
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5238J)
• JANTX level (2N5238JX)
• JANTXV level (2N5238JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV
• Radiation testing (total dose) upon request