2N5210NMBU Selling Leads, Price trend , Fairchild Semiconductor, 2N5210NMBU DataSheet download, circuit diagram from SeekIC.com

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2N5210NMBU: Transistors Bipolar (BJT) NPN Transistor General Purpose

2N5210NMBU Data Sheet

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Part Number:: 2N5210NMBU
Mfg:: Fairchild Semiconductor
Supply Ability:: 5000

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Upload time: 2024/11/24

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Product Details

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Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	50 V
Emitter- Base Voltage VEBO :	4.5 V	Maximum DC Collector Current :	0.1 A
DC Collector/Base Gain hfe Min :	200	Configuration :	Single
Maximum Operating Frequency :	30 MHz	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-92
Packaging :	Bulk

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Collector- Emitter Voltage VCEO Max : 50 V
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.1 A
Packaging : Bulk
Maximum Operating Frequency : 30 MHz
DC Collector/Base Gain hfe Min : 200
Emitter- Base Voltage VEBO : 4.5 V

Parameters:

Technical/Catalog Information	2N5210NMBU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	100mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 100A, 5V
Vce Saturation (Max) @ Ib, Ic	700mV @ 1mA, 10mA
Frequency - Transition	30MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5210NMBU 2N5210NMBU

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2N5210NMBU

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