Transistors Bipolar (BJT) PNP Gen Pur SS
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 50 V |
Emitter- Base Voltage VEBO : | 3 V | Maximum DC Collector Current : | 0.05 A |
DC Collector/Base Gain hfe Min : | 250 at 100 uA at 5 V | Configuration : | Single |
Maximum Operating Frequency : | 40 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | Through Hole | Package / Case : | TO-92 |
Packaging : | Reel |
Rating |
Symbol |
Value |
Unit |
Collector−Emitter Voltage |
VCEO |
50 |
Vdc |
Collector−Base Voltage |
VCBO |
50 |
Vdc |
Emitter−Base Voltage |
VEBO |
3.0 |
Vdc |
Collector Current − Continuous |
IC |
50 |
mAdc |
Total Device Dissipation @ TA = 25 Derate above 25 |
PD |
625 5.0 |
mW mW/ |
Total Device Dissipation @ TC = 25 Derate above 25 |
PD |
1.5 12 |
W mW/ |
Operating and Storage Junction Temperature Range |
TJ, Tstg |
−55 to +150 |