Features: Silicon power transistor for use inhigh speed power switching appli-cations.Housed in a TO-59case.Also available in chip form using the 9702chip geometry.The Min and Max limits shown are per MIL-PRF-19500/512 which Semicoa meets in all cases.Specifications Rating Symbol Rating Un...
2N5003: Features: Silicon power transistor for use inhigh speed power switching appli-cations.Housed in a TO-59case.Also available in chip form using the 9702chip geometry.The Min and Max limits shown are p...
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Rating | Symbol | Rating | Unit |
Collector-Emitter Voltage | VCEO | 80 | V |
Collector-Base Voltage | VCBO | 100 | V |
Emitter-Base Voltage | VEBO | 5.5 | V |
Collector Current, Continuous | IC | 10 | A |
Collector Current, PW < 8.3 ms, < 1% duty cycle | IC | 15 | A |
Power Disipation TA = 25 ambient Derate above 25 |
PT | 2 11.4 |
Watt mW/ |
Power Disipation TA = 25 ambient Derate above 25 |
PT | 58 331 |
Watt mW/ |
Operating Junction Temperature | TJ | -55 to +200 | |
Storage Temperature | TSTG | -55 to +200 |