Features: • Hermetically sealed TO-59 metal can• Also available in chip configuration• Chip geometry 9702• Reference document: MIL-PRF-19500/535Application• High-speed power-switching• Power Transistor• PNP silicon transistorSpecifications Parameter...
2N5005: Features: • Hermetically sealed TO-59 metal can• Also available in chip configuration• Chip geometry 9702• Reference document: MIL-PRF-19500/535Application• High-speed ...
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• Hermetically sealed TO-59 metal can
• Also available in chip configuration
• Chip geometry 9702
• Reference document: MIL-PRF-19500/535
Parameter |
Symbol |
Rating |
Unit |
Collector-Emitter Voltage |
VCEO |
80 |
Volts |
Collector-Base Voltage |
VCBO |
100 |
Volts |
Emitter-Base Voltage |
VEBO |
5.5 |
Volts |
Collector Current,Continuous |
IC |
5 |
A |
Power Dissipation, TA = 25 |
PT |
2 |
W |
Power Dissipation, TC = 25 |
PT |
58 |
W |
Thermal Resistance |
RJA |
88 |
/W |
Operating Junction Temperature |
TJ |
-65 to +200 |
|
Storage Temperature |
TSTG |
-65 to +200 |
Complement to the 2N5004
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5005J)
• JANTX level (2N5005JX)
• JANTXV level (2N5005JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV
• Radiation testing (total dose) upon request