2N3791, US $ 1.82-2.06 , Central Semiconductor, 2N3791 DataSheet download, circuit diagram from SeekIC.com

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2N3791: Transistors Bipolar (BJT) PNP GP Power

2N3791 Data Sheet

US $ 1.82~2.06 / Piece | Get Latest Price

Part Number:: 2N3791
Mfg:: Central Semiconductor
Supply Ability:: 5000

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25~100
100~250

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$2.06
$1.99
$1.9
$1.82

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Upload time: 2024/12/21

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Recent History
What is this?

2N3700 evaluate
US $.36 - .47 / Piece

Transistors Bipolar (BJT) NPN General Purpose
2N3700DCSM evaluate
Features: • DUAL SILICON PLANAR EPITAXIAL NPNTRANSISTOR• HERMETIC CERAMIC SURFACE MOUN...
2N3700S evaluate
Specifications Ratings Symbol Value Unit Collector-Emitter Voltage VCEO 8...

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	60 V
Emitter- Base Voltage VEBO :	7 V	Maximum DC Collector Current :	10 A
DC Collector/Base Gain hfe Min :	50	Maximum Operating Frequency :	4 MHz
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-3	Packaging :	Sleeve

Description

Configuration :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 7 V
DC Collector/Base Gain hfe Min : 50
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 4 MHz
Package / Case : TO-3
Packaging : Sleeve

Specifications

Parameter	Symbol	2N3791	2N3792	Unit
Collector to base voltage	V_CBO	60	80	Vdc
Collector to emitter voltage	V_CEO	60	80	Vdc
Emitter-Base Voltage	V_EBO	7.0		Vdc
Base Current	I_B	4.0		Adc
Collector current	I_C	10		Adc
Total Power Dissipation @ T_A= 250C ⁽¹⁾ @ T_C= 250C ⁽²⁾	P_T	5.0		W
Total Power Dissipation @ T_A= 250C ⁽¹⁾ @ T_C= 250C ⁽²⁾	P_T	85.7		W
Operating & Storage Junction Temperature Range	T_stg,T_j	-65 to +200		°C

1) Derate linearly @ 28.57 mW/⁰C for T_A > +25⁰C
2) Derate linearly @ 0.857 mW/⁰C for T_C > +100⁰C

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2N3791

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