2N3700

Transistors Bipolar (BJT) NPN General Purpose

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SeekIC No. : 00204258 Detail

2N3700: Transistors Bipolar (BJT) NPN General Purpose

floor Price/Ceiling Price

US $ .36~.47 / Piece | Get Latest Price
Part Number:
2N3700
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.47
  • $.43
  • $.39
  • $.36
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 7 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 200 C
Mounting Style : Through Hole Package / Case : TO-18
Packaging : Bulk    

Description

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Frequency : 100 MHz
Emitter- Base Voltage VEBO : 7 V
Maximum Operating Temperature : + 200 C
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 1 A
Packaging : Bulk
Package / Case : TO-18


Specifications

Ratings

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

80

Vdc

Collector-Base Voltage

VCBO

140

Vdc

Emitter-Base Voltage

VEBO

7.0

Vdc

Collector Current

IC

1.0

Adc

Total Power Dissipation
@ TA = +250C(1)
                           2N3019; 2N3019S
                           2N3057A
                           2N3700
                           2N3700UB
@ TC = +250C(2)
                           2N3019; 2N3019S
                           2N3057A
                           2N3700
                           2N3700UB

PT

 

0.8
0.4
0.5
0.4


5.0
1.8
1.8
1.16

W

 


W

Operating & Storage Jct Temp Range

Tj, Tstg

-55 to +175

0C

1) Derate linearly 4.6 mW/0C for type 2N3019 and 2N3019S; 2.3 mW/0C for type 2N3057A;
    2.85 mW/0C for type 2N3700; 6.6 mW/0C for type 2N3700UB for TA  +250C.
2) Derate linearly 28.6 mW/0C for type 2N3019 and 2N3019S;
    10.3 mW/0C for types 2N3057A, 2N3700, & 2N3700UB for TC  +250C.




Parameters:

Technical/Catalog Information2N3700
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)1A
Power - Max1W
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Frequency - Transition100MHz
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-18, Metal Case
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N3700
2N3700
497 3108 5 ND
49731085ND
497-3108-5



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