Features: · Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp· High Gain Characteristics: hFE @ IC = 250 mA: 30-100· Excellent Safe Area Limits· Low Collector Cutoff Current: 100 nA (Max) 2N3741AApplication· Drivers· Switches· Medium-Power AmplifiersSpecifications SYMBOL CHARACTERISTIC VA...
2N3741A: Features: · Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp· High Gain Characteristics: hFE @ IC = 250 mA: 30-100· Excellent Safe Area Limits· Low Collector Cutoff Current: 100 nA (Max) 2N3741AA...
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SYMBOL | CHARACTERISTIC | VALUE | UNITS |
VCEO* VEB* VCB* |
Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage |
80 7.0 80 |
Vdc Vdc Vdc |
IC* IC* IB* |
Peak Collector Current Continuous Collector Current Base Current |
10 4.0 2.0 |
Vdc Vdc Vdc |
TSTG* TJ* |
Storage Temperature Operating Junction Temperature |
-65 to 200 -65 to 200 |
°C °C |
PD*
|
Total Device Dissipation TC = 25°C Derate above 25°C Thermal Impedance |
25
|
Watts
|
The 2N3741A is produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. The 2N3741A is intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications.
Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200°C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.