2N3737UB

Features:

• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0806
• Reference document:
MIL-PRF-19500/395


Application

• General purpose
• Low power
• NPN silicon transistor


Specifications

Characteristics	Symbol	Rating	Unit
Collector-base voltage	VCBO	40	Volts
Collector-emitter voltage	VCEO	75	Volts
Emitter-base voltage	VEBO	5	Volts
Collector current	IC	1.5	A
Power Dissipation, TC = 25 Derate linearly above 37.5	PT	0.5 3.07	W mW/
Thermal Resistance	RRJA	325	/W
Operating Junction Temperature	TJ	-65 to +200
Storage Temperature	Tstg	-65 to +200

Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3737UBJ)
• JANTX level (2N3737UBJX)
• JANTXV level (2N3737UBJV)
• JANS level (2N3737UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request