Transistors Bipolar (BJT) NPN GP Power
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 60 V | ||
Emitter- Base Voltage VEBO : | 7 V | Maximum DC Collector Current : | 10 A | ||
DC Collector/Base Gain hfe Min : | 50 | Maximum Operating Frequency : | 4 MHz | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-3 | Packaging : | Sleeve |
Parameters / Test Conditions | Symbol | 2N3766 | 2N3767 | Units |
Collector-Emitter Voltage | VCEO | 60 | 80 | Vdc |
Collector-Base Voltage | VCBO | 80 | 100 | Vdc |
Emitter-Base Voltage | VEBO | 7.0 | Vdc | |
Base Current | IB | 4.0 | Vdc | |
Collector Current | IC |
10 | Adc | |
Total Power Dissipation @ TA = +25(1) @ TA = +25(2) |
PT | 5.0 85.7 |
W W | |
Operating Junction & Storage Temperature Range | Top , Tstg | -65 to +200 | °C |