2N3704

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Maximum DC Collector Current : 0.8 A
Packaging : Box
Collector- Emitter Voltage VCEO Max : 30 V
DC Collector/Base Gain hfe Min : 100 at 50 mA at 2 V


Features:

• This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA.
• Sourced from Process 10.
• See PN100 for characteristics.




Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	30	V
VCBO	Collector-Base Voltage	50	V
VEBO	Emitter-Base Voltage	5.0	V
IC	Collector Current - Continuous	500	mA
TJ, TST	Operating and Storage Junction Temperature Range	-55 ~ +150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.




Parameters:

Technical/Catalog Information	2N3704
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 5mA, 100mA
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N3704 2N3704