2N3584

Transistors Bipolar (BJT) NPN High Power

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SeekIC No. : 00206679 Detail

2N3584: Transistors Bipolar (BJT) NPN High Power

floor Price/Ceiling Price

US $ 4.42~4.79 / Piece | Get Latest Price
Part Number:
2N3584
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $4.79
  • $4.7
  • $4.55
  • $4.42
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 250 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 40 Maximum Operating Frequency : 10 MHz
Maximum Operating Temperature : + 150 C Mounting Style : Stud
Package / Case : TO-66 Packaging : Sleeve    

Description

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 250 V
Maximum DC Collector Current : 2 A
Maximum Operating Frequency : 10 MHz
Packaging : Sleeve
Mounting Style : Stud
Package / Case : TO-66


Specifications

Ratings

Symbol

2N3584

2N3585

Unit

Collector-Emitter Voltage

VCEO

250

300

Vdc

Collector-Base Voltage

VCBO

375

500

Vdc

Collector-Base Voltage

VCER

300

400

Vdc

Emitter-Base Voltage

VEBO

6.0

Vdc

Base Current

IB

1.0

Adc

Collector Current

IC

2.0

Adc

Total Power Dissipation @ TA = +250C (1)
@ TC = +250C (2)

PT

2.5
35

W
W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

0C

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

RqJC

5.0

0C/W

1) Derate linearly @ 14.85 mW/0C for TA > +250C
2) Derate linearly @ 200 mW/0C for TC > +250C






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