2N3584, US $ 4.42-4.79 , Central Semiconductor, 2N3584 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00206679 Detail

2N3584: Transistors Bipolar (BJT) NPN High Power

2N3584 Data Sheet

US $ 4.42~4.79 / Piece | Get Latest Price

Part Number:: 2N3584
Mfg:: Central Semiconductor
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	250 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	2 A
DC Collector/Base Gain hfe Min :	40	Maximum Operating Frequency :	10 MHz
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Stud
Package / Case :	TO-66	Packaging :	Sleeve

Description

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 250 V
Maximum DC Collector Current : 2 A
Maximum Operating Frequency : 10 MHz
Packaging : Sleeve
Mounting Style : Stud
Package / Case : TO-66

Specifications

Ratings	Symbol	2N3584	2N3585	Unit
Collector-Emitter Voltage	V_CEO	250	300	Vdc
Collector-Base Voltage	V_CBO	375	500	Vdc
Collector-Base Voltage	V_CER	300	400	Vdc
Emitter-Base Voltage	V_EBO	6.0		Vdc
Base Current	I_B	1.0		Adc
Collector Current	I_C	2.0		Adc
Total Power Dissipation @ T_A= +25⁰C ⁽¹⁾ @ T_C = +25⁰C ⁽²⁾	P_T	2.5 35		W W
Operating & Storage Junction Temperature Range	T_J, T_stg	-65 to +200		⁰C

THERMAL CHARACTERISTICS

Characteristics	Symbol	Max.	Unit
Thermal Resistance, Junction-to-Case	R_qJC	5.0	⁰C/W

1) Derate linearly @ 14.85 mW/⁰C for T_A > +25⁰C
2) Derate linearly @ 200 mW/⁰C for T_C > +25⁰C

2N3584

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