Transistors Bipolar (BJT) NPN High Power
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Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 250 V | ||
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 2 A | ||
DC Collector/Base Gain hfe Min : | 40 | Maximum Operating Frequency : | 10 MHz | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Stud | ||
Package / Case : | TO-66 | Packaging : | Sleeve |
Ratings |
Symbol |
2N3584 |
2N3585 |
Unit |
Collector-Emitter Voltage |
VCEO |
250 |
300 |
Vdc |
Collector-Base Voltage |
VCBO |
375 |
500 |
Vdc |
Collector-Base Voltage |
VCER |
300 |
400 |
Vdc |
Emitter-Base Voltage |
VEBO |
6.0 |
Vdc | |
Base Current |
IB |
1.0 |
Adc | |
Collector Current |
IC |
2.0 |
Adc | |
Total Power Dissipation @ TA = +250C (1) |
PT |
2.5 |
W | |
Operating & Storage Junction Temperature Range |
TJ, Tstg |
-65 to +200 |
0C |
THERMAL CHARACTERISTICS
Characteristics |
Symbol |
Max. |
Unit |
Thermal Resistance, Junction-to-Case |
RqJC |
5.0 |
0C/W |
1) Derate linearly @ 14.85 mW/0C for TA > +250C
2) Derate linearly @ 200 mW/0C for TC > +250C