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2N3500

Features: Mechanical Specifications Metallization Top Al - 22.5 kÅ min. Backside Au - 6.5 kÅ nom. Bonding Pad Size Emitter 5.0 mils diameter Base 5.0 mils diameter Die Thickness 8 mils nominal Chip Area 30 mils x 30 mils ...

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SeekIC No. : 004218868 Detail

2N3500: Features: Mechanical Specifications Metallization Top Al - 22.5 kÅ min. Backside Au - 6.5 kÅ nom. Bonding Pad Size Emitter 5.0 mils diameter ...

2N3500 Data Sheet

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Part Number:
2N3500
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

Mechanical Specifications

Metallization

Top

Al - 22.5 kÅ min.

Backside

Au - 6.5 kÅ nom.

Bonding Pad Size

Emitter

5.0 mils diameter

Base

5.0 mils diameter

Die Thickness

8 mils nominal

Chip Area

30 mils x 30 mils

Top Surface

Silox Passivated




Application

    Designed for switching and amplifier applications.


Description

   Chip type 2N3500 by Semicoa Semiconductorsprovides performancesimilar to these devices.


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